Quantum dots in III-V semiconductor nanowires for generation of non-classical light - Dan Dalacu

Semiconductor quantum dots possess the critical properties required of quantum light sources for optical quantum information processing: generation of single photons, indistinguishable photons, and entangled photon pairs. The nanowire approach to quantum dot growth¹ offers several unique advantages. On one hand, the dots are readily incorporated into photonic waveguide structures that can be tailored for very efficient photon extraction and used as bright sources in secure quantum communication schemes^2,3. On the other hand, the nanowire geometry lends itself to a pick and place approach for integration with planar photonic circuits for integrated linear optical quantum computing⁴. Additionally, nanowires provide an ideal geometry for growth of perfectly aligned multiple quantum dots with monolayer control of dot-dot separation⁵. Such coupled quantum dots can be used to generate higher-order entangled states, useful in quantum repeater and optical quantum computing applications. In this presentation, I will describe a route to producing bright sources of non-classical light using InAsP quantum dots in pure phase wurtzite InP photonic nanowires.

1. D. Dalacu, et al, Nanotech. 20, 395602 (2009); D. Dalacu et al, Nano Lett. 12, 5919 (2012).
2. M.E. Reimer et al, Phys. Rev. B 93, 195316 (2016).
3. M.A.M. Versteegh et al, Nature Commun. 5, 5298 (2014); T. Huber et al, Nano Lett. 14, 7107 (2014).
4. I.E. Zadeh et al, Nano Lett. 16, 2289 (2016). 5. M. Khoshnegar et al, arXiv preprint, arXiv:1510.05898 (2015).